American Elements
Aluminum Sputtering Target
Al
7429-90-5
Product
Product Code
Order or Specifications
99% Aluminum Sputtering Target
AL-M-02-ST
Contact American Elements
99.5% Aluminum Sputtering Target
AL-M-025-ST
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99.9% Aluminum Sputtering Target
AL-M-03-ST
Contact American Elements
99.95% Aluminum Sputtering Target
AL-M-035-ST
Contact American Elements
99.99% Aluminum Sputtering Target
AL-M-04-ST
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99.999% Aluminum Sputtering Target
AL-M-05-ST
Contact American Elements
See research below. American Elements specializes in producing high purity Aluminum sputtering targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Induction Plasma Spectrometry (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes nanoparticles. We also produce Aluminum as disc, granules, ingot, pellets, pieces, powder, and rod. Other shapes are available by request.

Aluminum is a Block P, Group 13, Period 3 element. The electronic configuration is [Ne] 3s2 3p1. In its elemental form aluminum's CAS number is 7429-90-5. The aluminum atom has a radius of 143.2.pm and it's Van der Waals radius is 200.pm.

Formula CAS No. Appearance Molecular Weight Density Melting Point Boiling Point
Al 7429-90-5 Silvery 26.98 2700 kg/m³ 660.32 °C 2519 °C
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.

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Recent Research & Development for Aluminum Metal

  • Laser iridotomy in dark irides.
    Br J Ophthalmol. 2007 Feb;91(2):222-5.

  • Asymmetric Conjugate Addition of Silyl Enol Ethers Catalyzed by Tethered Bis(8-quinolinolato) Aluminum Complexes.
    J Am Chem Soc. 2007 Jan 31;129(4):742-3.

  • Treatment of urban runoff at Lake Tahoe: low-intensity chemical dosing.
    Water Environ Res. 2006 Dec;78(13):2487-500.

  • Interactions between chloride and sulfate or silica removals using an advanced lime-aluminum softening process.
    Water Environ Res. 2006 Dec;78(13):2474-9.

  • Atmospheric Deposition and Ozone Levels in Swiss Forests: Are Critical Values Exceeded?
    Environ Monit Assess. 2007 Jan 23; [Epub ahead of print]

  • Exudation of organic acid anions from poplar roots after exposure to Al, Cu and Zn.
    Tree Physiol. 2007 Feb;27(2):313-20.

  • Control of the anodic aluminum oxide barrier layer opening process by wet chemical etching.
    Langmuir. 2007 Jan 30;23(3):1564-8.

  • Study of the Resistance of SAMs on Aluminium to Acidic and Basic Solutions Using Dynamic Contact Angle Measurement.
    Langmuir. 2007 Jan 30;23(3):995-999.

  • Pattern Formation and Self-Organization in a Simple Precipitation System.
    Langmuir. 2007 Jan 30;23(3):961-964.

  • The toxic release inventory: Fact or fiction? A case study of the primary aluminum industry.
    J Environ Manage. 2007 Jan 18; [Epub ahead of print]

 

 

 

 

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