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Gallium
Selenide Sputtering Target |
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Ga Se Target (p-type) |
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Gallium Selenide for solar energy applications is a p-type or absorber layer material. Find Safety and Research information below. CIGS-based photovoltaic cells (PV Cells) for solar energy are fabricated from a positively charged or p-type Gallium doped Copper Indium Selenide (CIGS) layer underneath a negatively charged or n-type layer. The p-type layer can be partially produced by thin film physical/chemical vapor deposition of a Gallium Selenide Target sold under the AE Solar Energy group. Most CIGS-based PV solar cells are produced from thin film deposition of CIGS layers. Gallium is a Block P, Group 13, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p1. In its elemental form gallium's CAS number is 7440-55-3. The gallium atom has a radius of 122.1.pm and it's Van der Waals radius is 187.pm. |
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Recent Research & Development for Galium Selenide Sputtering Target
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