American Elements
Germanium Oxide Sputtering Target
GeO2
1310-53-8
Product
Product Code
Order or Specifications
99.9% Germanium Oxide Sputtering Target
GE-OX-03ST
Contact American Elements
99.99% Germanium Oxide Sputtering Target
GE-OX-04ST
Contact American Elements
99.999% Germanium Oxide Sputtering Target
GE-OX-05ST
Contact American Elements
American Elements specializes in producing high purity Germanium oxide sputtering targets with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Our standard Sputtering Targets for thin film are available monoblock or bonded with dimensions and configurations up to 820 mm with hole drill locations and threading, beveling, grooves and backing designed to work with both older sputtering devises as well as the latest process equipment, such as large area coating for solar energy or fuel cells and flip-chip applications. Research sized targets are also produced as well as custom sizes and alloys. All targets are analyzed using best demonstrated techniques including X-Ray Fluorescence (XRF), Glow Discharge Mass Spectrometry (GDMS), and Induction Plasma Spectrometry (ICP). "Sputtering" allows for thin film deposition of an ultra high purity sputtering metallic or oxide material onto another solid substrate by the controlled removal and conversion of the target material into a directed gaseous/plasma phase through ionic bombardment. We can also provide targets outside this range in addition to just about any size rectangular, annular, or oval target. Materials are produced using crystallization, solid state and other ultra high purification processes such as sublimation. American Elements specializes in producing custom compositions for commercial and research applications and for new proprietary technologies. American Elements also casts any of the rare earth metals and most other advanced materials into rod, bar or plate form, as well as other machined shapes and through other processes such as nanoparticles (See also application discussion at Nanotechnology Information and at Quantum Dots) and in the form of solutions and organometallics. We also produce Germanium Oxide as rods, powder and plates. Oxide compounds are not conductive to electricity. See research below. Other shapes are available by request.

Germanium is a Block P, Group 14, Period 4 element. The electronic configuration is [Ar] 3d10 4s2 4p2. In its elemental form germanium's CAS number is 7440-56-4. The germanium atom has a radius of 122.5.pm and it's Van der Waals radius is 200.pm.

Formula CAS No. Appearance Molecular Weight
GeO2 1310-53-8 White Powder 104.59
PRODUCT CATALOG Submicron & Nanopowder Tolling Ultra High Purity Sputtering Target Crystal Growth Rod, Plate, Powder, etc.
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Recent Research & Development for Germanium Oxide

  • Electronic Properties of Si and Ge Atoms Doped In Clusters: In(n)()Si(m)() and In(n)()Ge(m)().
    J Phys Chem A Mol Spectrosc Kinet Environ Gen Theory. 2007 Feb 1;111(4):573-7.

  • Self-Assembly and Phase Behavior of Germanium Oxide Nanoparticles in Basic Aqueous Solutions.
    Langmuir. 2007 Jan 23; [Epub ahead of print]

  • [Au(3)Ge(18)](5-)-A Gold-Germanium Cluster with Remarkable Au-Au Interactions.
    Angew Chem Int Ed Engl. 2007 Jan 18; [Epub ahead of print] No abstract available.

  • Monolayers at solid-solid interfaces probed with infrared spectroscopy.
    Anal Bioanal Chem. 2007 Jan 10; [Epub ahead of print]

  • Biochemical Interaction Analysis on ATR Devices: A Wet Chemistry Approach for Surface Functionalization.
    Langmuir. 2007 Jan 16;23(2):949-955.

  • Density functional theory study of twelve-atom germanium clusters: conflict between the Wade-Mingos rules and optimum vertex degrees.
    Dalton Trans. 2007 Jan 21;(3):364-72. Epub 2006 Dec 8.

  • Crystallography and surface faceting of germanium nanowires.
    Small. 2005 Jul;1(7):717-21. No abstract available.

  • Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
    Small. 2005 Apr;1(4):429-38.

  • {Ge(10)Si[Si(SiMe(3))(3)](4)(SiMe(3))(2)Me}(-): A Ge(10)Si framework reveals a structural transition onto elemental germanium.
    Chem Commun (Camb). 2007 Jan 14;(2):192-4. Epub 2006 Oct 24.

  • DETERMINATION OF CONVERSION FACTORS FROM AIR KERMA TO OPERATIONAL DOSE EQUIVALENT QUANTITIES FOR LOW-ENERGY X-RAY SPECTRA.
    Radiat Prot Dosimetry. 2006 Dec 16; [Epub ahead of print]

 

 

 

 

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